Double-Densified VerticallyAligned Carbon Nanotube Bundles for Application in 3D Integration High Aspect Ratio TSV Interconnects
Paper in proceeding, 2016

The treatment of densification by vapor on pristine MWCNT bundles are necessary to improve the effective area of the CNT TSV. However, the CNT bundles might tilt partly because of the non-uniform densification at root of the bundle, especially when it comes to the high aspect ratio CNT bundles. In order to solve these problems, a double densification process has been proposed and developed here. First of all, the shape of partial densified CNT bundles were optimized as a function of time. After several steps such as transferring of partial densified CNT bundles into the via, second densification, epoxy filling and chemical mechanical polishing, the CNT filled TSV with aspect ratio of 10 was achieved. The current voltage response of the CNT TSV interconnection indicated good electrical connection was formed. The resistivity of CNT bundles in via was calculated to be around 2-3 milli-ohmcm.

Author

Wei Mu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Josef Hansson

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Shuangxi Sun

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Michael Edwards

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Yifeng Fu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Johan Liu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Proceedings - Electronic Components and Technology Conference

05695503 (ISSN)

Vol. 2016-August 211-216
978-1-5090-1204-6 (ISBN)

Areas of Advance

Production

Subject Categories

Nano Technology

DOI

10.1109/ECTC.2016.160

ISBN

978-1-5090-1204-6

More information

Latest update

7/12/2024