Large area and uniform monolayer graphene CVD growth on oxidized copper in a cold wall reactor
Paper in proceedings, 2016

Graphene growth on copper in cold wall chemical vapor deposition (CVD) is not an inherently self- limiting process, which means that adlayers appear as long as there is sufficient growth time. The growth of large area and uniform monolayer becomes crucial and imminent. In this study, the pre-Treatment of oxidation was employed on copper. The results have shown that oxidation pre-Treatment in combination with argon annealing process would not only decrease the density of nucleation site, but also suppress the activity of nucleation site for the multilayer graphene growth. Therefore, large area and uniform monolayer graphene was obtained. The characterization of SEM. AFM and Raman analysis was also performed on either pristine graphene copper or transferred graphene on silicon oxide substrate.

Author

Wei Mu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Yifeng Fu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Shuangxi Sun

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Michael Edwards

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Lilei Ye

Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Johan Liu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

IMAPS Nordic Annual Conference 2016 Proceedings

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-5108-2722-6

More information

Latest update

9/21/2018