Analysis of Lateral Thermal Coupling for GaN MMIC Technologies
Journal article, 2018

This paper presents a study of the lateral heat propagation in an aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure grown on a silicon carbide substrate. The study is enabled by the design of a temperature sensor that utilizes the temperature-dependent I-V characteristic of a semiconductor resistor, making it suitable for integration in GaN monolithic microwave integrated circuit technologies. Using the sensor, we are able to characterize the thermal transient response and extract lateral thermal time constants from the measurements. Time constants in the range from 25 mu s to 1.2 ms are identified. Furthermore, the heat propagation properties are characterized for heat source-to-sensor distances of 86-484 mu m, resulting in delay times from 3.5 to 111 mu s. It is shown that both the time constants and propagation delay increase with temperature. An empirical model of the sensor current versus temperature and voltage is proposed and used to predict the junction temperature of the sensor. The study provides knowledge for heat management design and proposes an integrated temperature measurement solution for future highly integrated GaN applications.

heat spread

lateral coupling

Gallium nitride (GaN)

semiconductor resistor

thermal sensors

Author

Johan Bremer

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Johan Bergsten

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Lowisa Hanning

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Torbjörn Nilsson

Saab AB

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Sebastian Gustafsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Martin Eriksson

Chalmers, Physics, Condensed Matter Theory

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

GigaHertz Centre

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 66 10 4430-4438

Subject Categories

Energy Engineering

Other Engineering and Technologies not elsewhere specified

Other Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/TMTT.2018.2848932

More information

Latest update

3/27/2019