Electrically conductive thermal interface materials based on vertically aligned carbon nanotubes mats
Paper i proceeding, 2014

In power microelectronics, the trends towards miniaturization and higher performances result in higher power densities and more heat to be dissipated. In most electronic assembly, thermal interface materials (TIM) help provide a path for heat dissipation but still represent a bottleneck in the total thermal resistance of the system. VA-CNTs mats are typically grown on HR silicon substrate with Al2O3 diffusion barrier layer using Thermal CVD process. In many cases, 'die attach' thermal interface materials need to be electrically conductive and the growth of dense VA-CNT mats on an electrically conductive substrate remains a challenge. This paper presents the growth of dense VA-CNT mats on doped silicon with Al2O3 and TiN diffusion barrier layer. Processes, thermal and electrical characterization of VA-CNTs based thermal interface materials are studied and reported.

Författare

J. Daon

Thales Research and Technology

Ecole Centrale Paris

Shuangxi Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Di Jiang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

G. Cibien

Thales Research and Technology

E.M. Leveugle

Thales Research and Technology

C. Galindo

Thales Research and Technology

A. Ziaei

Thales Research and Technology

L. Ye

SHT Smart High-Tech

Yifeng Fu

SHT Smart High-Tech

J. Bai

Ecole Centrale Paris

Johan Liu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

IEEE 20th International Workshop on Thermal Investigation of ICs and Systems (Therminic). Greenwich, London, United Kingdom, 24-26 September 2014

6972534

Ämneskategorier

Materialteknik

DOI

10.1109/THERMINIC.2014.6972534

ISBN

978-1-4799-5415-5