Vertically stacked carbon nanotube-based interconnects for through silicon via application
Journal article, 2015

Stacking of silicon chips with carbon nanotube (CNT)-based through-silicon vias (TSVs) is experimentally demonstrated. Polymer filling is used to improve the transfer quality of CNTs into pre-etched silicon holes. Special hexagonal CNTs are designed to achieve high aspect ratio (10:1) CNT vias. TSVs filled with closely packed CNTs show a highly linear dc I - V response. The proposed process works at room temperature, which makes it compatible with existing device fabrication flow.

transfer

through-silicon via (TSV)

densification

Carbon nanotube (CNT)

interconnect

3D stacking

Author

Di Jiang

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Wei Mu

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Si Chen

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Yifeng Fu

SHT Smart High-Tech

Kjell Jeppson

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Johan Liu

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 36 5 499-501

Carbon Based Smart Systems for Wireless Applications (NANO RF)

European Commission (FP7), 2012-09-01 -- 2015-08-31.

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Production

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/LED.2015.2415198

More information

Latest update

3/7/2018 7