Vertically stacked carbon nanotube-based interconnects for through silicon via application
Artikel i vetenskaplig tidskrift, 2015

Stacking of silicon chips with carbon nanotube (CNT)-based through-silicon vias (TSVs) is experimentally demonstrated. Polymer filling is used to improve the transfer quality of CNTs into pre-etched silicon holes. Special hexagonal CNTs are designed to achieve high aspect ratio (10:1) CNT vias. TSVs filled with closely packed CNTs show a highly linear dc I - V response. The proposed process works at room temperature, which makes it compatible with existing device fabrication flow.

transfer

through-silicon via (TSV)

densification

Carbon nanotube (CNT)

interconnect

3D stacking

Författare

Di Jiang

Chalmers, Teknisk fysik, Elektronikmaterial och system

Wei Mu

Chalmers, Teknisk fysik, Elektronikmaterial och system

Si Chen

Chalmers, Teknisk fysik, Elektronikmaterial och system

Yifeng Fu

SHT Smart High-Tech

Kjell Jeppson

Chalmers, Teknisk fysik, Elektronikmaterial och system

Johan Liu

Chalmers, Teknisk fysik, Elektronikmaterial och system

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 36 5 499-501

Carbon Based Smart Systems for Wireless Applications (NANO RF)

Europeiska kommissionen (FP7), 2012-09-01 -- 2015-08-31.

Styrkeområden

Nanovetenskap och nanoteknik

Produktion

Ämneskategorier

Elektroteknik och elektronik

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1109/LED.2015.2415198

Mer information

Senast uppdaterat

2018-03-07