Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
Journal article, 2016

For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300: 1 were obtained. The resistivity of this nanomaterial was found to be as low as similar to 10(-8) Omega m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.

CNT-Cu

nanocomposite

TSV

3D-IC

Author

Shuangxi Sun

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Wei Mu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Michael Edwards

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Davide Mencarelli

Marche Polytechnic University

Luca Pierantoni

Marche Polytechnic University

Yifeng Fu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Johan Liu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 27 33 Art no335705-

Subject Categories

Materials Engineering

Areas of Advance

Production

Materials Science

DOI

10.1088/0957-4484/27/33/335705

More information

Latest update

9/21/2018