Cryogenic low-noise InP HEMTs: A source-drain distance study
Paper in proceedings, 2016

The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.

InP HEMT

low noise temperature

cryogenic operation

Author

Eunjung Cha

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Arsalan Pourkabirian

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Joel Schleeh

Low Noise Factory AB

Niklas Wadefalk

Low Noise Factory AB

Giuseppe Moschetti

Low Noise Factory AB

Piotr Starski

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Göran Alestig

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

John Halonen

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Bengt Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

GigaHertz Centre

Per-Åke Nilsson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

2016 Compound Semiconductor Week, CSW 2016

Article number 7528576-

Subject Categories

Condensed Matter Physics

DOI

10.1109/ICIPRM.2016.7528576

ISBN

978-150901964-9

More information

Latest update

11/23/2018