Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
Artikel i vetenskaplig tidskrift, 2011

This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-mu m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the Y-factor method. The total noise temperature of 1310 +/- 100K(corresponding to an NF of 7.4 dB), including the losses in the lens and antenna, is measured at 220 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.

ghz

multifunctional

imaging

slot-square substrate

cmos

GaAs

millimeter wave

220 GHz

model

mixer

single chip

wave

(mHEMT)

microwave integrated circuit (MMIC)

quasi-optical

schottky diodes

metamorphic high electron-mobility transistor

mesfet

sounder

G-band

microstrip

monolithic

lens feed antenna

Författare

[Person d201a0b8-c846-43ea-b376-fc17146679b6 not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 1c44d788-3c5d-4911-8825-cb08fb7f6500 not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 314709ad-24ee-4679-837a-3bc35b270e24 not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 3ca5314c-0c87-414c-ad37-9434dc3e56e0 not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 460c924a-9a5b-46ba-b245-47f90420b375 not found]

[Person 202de2cc-edf9-43a0-b3e9-757a7afda3a1 not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 633eec51-8892-4486-99f3-4d3a0a6daf10 not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 350d10bb-c2e3-4da0-baa2-e97abe7d272a not found]

[Person 5f439199-8b26-4d62-b585-6ee8f02557a9 not found]

[Person ee6c1c7c-4a22-494d-b363-457c26b1680f not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 59 2 466-478

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TMTT.2010.2095028

Mer information

Skapat

2017-10-07