Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
Paper i proceeding, 2019

This work addresses the angular dependence of DC properties in 100nm InP HEMT devices under the influence of applied static magnetic field at 2 K. When kept at an angle 90o towards a magnetic field of 14 T, the maximum output drain current Ids was reduced more than 99 %. A rotation sweep of the transistor revealed a strong angular and B-field dependence on Ids. This was correlated with a reduction in dc transconductance and increase in on-resistance of the transistor. The RF properties of the transistor were tested by measuring an 0.3-14 GHz InP HEMT MMIC low-noise amplifier (LNA) at 2 K kept at an angle 90o towards a magnetic field up to 10 T. The gain and noise temperature were strongly decreased and increased, respectively, already below 1 T. The results show that precise alignment of the cryogenic InP HEMT LNA is crucial in a magnetic field. Even a slight mis-orientation of a few degrees leads to a strong degradation of the gain and noise temperature.

cryogenic

InP HEMT

low noise amplifier

angular dependence

magnetic field

Författare

Isabel Harrysson Rodrigues

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

David Niepce

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantteknologi

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Arsalan Pourkabirian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Joel Schleeh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Thilo Bauch

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

IIS UTokyo SYMPOSIUM No.100

Compound Semiconductor Week
Nara, Japan,

Styrkeområden

Nanovetenskap och nanoteknik (2010-2017)

Ämneskategorier

Annan fysik

Annan materialteknik

Den kondenserade materiens fysik

Infrastruktur

Nanotekniklaboratoriet

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Senast uppdaterat

2019-11-13