Xinju Liu

Showing 17 publications

2009

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Thorvald Andersson, Xinju Liu, T. Aggerstam et al
Microelectronics. Vol. 40 (2), p. 360-362
Journal article
2008

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Xinju Liu, T. Aggerstam, P. Holmstrom et al
Journal of Physics: Conference Series. Vol. 100 (PART 4)
Paper in proceedings
2007

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epiotaxy

Xinju Liu, Peter Jänes, Petter Holmström et al
Journal of Crystal Growth. Vol. 300 (1), p. 79-
Journal article
2007

GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 um intersubband absorption

Thomas Aggerstam, Thorvald Andersson, Petter Holmström et al
Quantum Sensing and Nanophotonic Devices IV, Manijeh Razeghi; Gail J. Brown, Editors,. Vol. 6479, p. 64791E-
Paper in proceedings
2007

Intersubband absorption at 1.5-3.5 um in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Xinju Liu, Petter Holmström, Peter Jänes et al
Physica Status Solidi (B): Basic Research. Vol. 244 (8), p. 2892-
Journal article
2007

Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

Xinju Liu, Thomas Aggerstam, Peter Jänes et al
Journal of Crystal Growth. Vol. 301-302, p. 457-
Journal article
2007

GaN/AlN Multiple Quantum Well Structures

Xinju Liu
Doctoral thesis
2007

Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

Xinju Liu, H.F. Liu, A. Uddin et al
Journal of Crystal Growth. Vol. 300 (1), p. 114-
Journal article
2006

[M]. Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Fredrik Fälth, Stefan Davidsson, Xinju Liu et al
Thin solid films. Vol. 515, p. 603-
Journal article
2006

[L]. GaN grown on sapphire, Si and GaN substrates by molecular beam epitaxy

Xinju Liu, Thomas Aggerstam, Sebastian Lourdudoss et al
Proceedings for 30th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, p. 213-
Paper in proceedings
2005

Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Fredrik Fälth, Stefan Davidsson, Xinju Liu et al
applied physics letters. Vol. 87, p. 161901-
Journal article
2005

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Xinju Liu, Fredrik Fälth, Thorvald Andersson et al
Journal of Crystal Growth. Vol. 278, p. 397-
Journal article
2005

[J]. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Stefan Davidsson, Fredrik Fälth, Xinju Liu et al
Journal of applied physics. Vol. 98 (1), p. 16109-
Journal article
2005

Influence of dislocation density on photoluminescence intensity of GaN

Fredrik Fälth, Manjula Gurusinghe, Xinju Liu et al
Journal of crystal growth. Vol. 278, p. 406-
Journal article
2004

Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Xinju Liu, Thorvald Andersson
applied surface science. Vol. 226, p. 331-
Journal article
2003

Inductively Coupled Plasma Etching of GaN Mesa Structures for Microphotoluminescence

Toshio Kawahara, Fredrik Fälth, Xinju Liu et al
Proceedings of the 2nd IMP3 conference
Paper in proceedings

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