Xinju Liu

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

2008

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Intersubband absorption at 1.5-3.5 um in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 um intersubband absorption

Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epiotaxy

Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

GaN/AlN Multiple Quantum Well Structures

[L]. GaN grown on sapphire, Si and GaN substrates by molecular beam epitaxy

[M]. Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

[J]. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Influence of dislocation density on photoluminescence intensity of GaN

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

AlN/GaN MQW structures - MBE growth and characterization

Inductively Coupled Plasma Etching of GaN Mesa Structures for Microphotoluminescence