Tape-Assisted Transfer of Carbon Nanotube Bundles for Through-Silicon-Via Applications
Artikel i vetenskaplig tidskrift, 2015

Robust methods for transferring vertically aligned carbon nanotube (CNT) bundles into through-silicon vias (TSVs) are needed since CNT growth is not compatible with complementary metal–oxide–semiconductor (CMOS) technology due to the temperature needed for growing high-quality CNTs (∼700°C). Previous methods are either too complicated or not robust enough, thereby offering too low yields. Here, a facile transfer method using tape at room temperature is proposed and experimentally demonstrated. Three different kinds of tape, viz. thermal release tape, Teflon tape, and Scotch tape, were applied as the medium for CNT transfer. The CNT bundle was adhered to the tape through a flip-chip bonder, and the influence of the bonding process on the transfer results was investigated. Two-inch wafer-scale transfer of CNT bundles was realized with yields up to 97% demonstrated. After transfer, the use of several different polymers was explored for filling the gap between the transferred CNT bundle and the sidewalls of the TSV openings to improve the filling performance. The current–voltage characteristic of the CNT TSVs indicated good electrical performance, and by measuring the via resistance as a function of via thickness, contact resistances could be eliminated and an intrinsic CNT resistivity of 1.80 mΩ cm found.

polymer filling

Carbon nanotube bundles

resistivity

postgrowth transfer

TSV

Författare

Wei Mu

Chalmers, Teknisk fysik, Elektronikmaterial

Shanghai University

Shuangxi Sun

Chalmers, Teknisk fysik, Elektronikmaterial

Di Jiang

Chalmers, Teknisk fysik, Elektronikmaterial

Yifeng Fu

SHT Smart High-Tech

Michael Edwards

Chalmers, Teknisk fysik, Elektronikmaterial

Yong Zhang

Chalmers, Teknisk fysik, Elektronikmaterial

Shanghai University

Kjell Jeppson

Chalmers, Teknisk fysik, Elektronikmaterial

Johan Liu

Shanghai University

Chalmers, Teknisk fysik, Elektronikmaterial

Journal of Electronic Materials

0361-5235 (ISSN) 1543-186X (eISSN)

Vol. 44 8 2898-2907

Styrkeområden

Nanovetenskap och nanoteknik

Fundament

Grundläggande vetenskaper

Ämneskategorier

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1007/s11664-015-3752-2

Mer information

Senast uppdaterat

2022-04-05