Eric Lefebvre

Showing 13 publications

2014

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Eric Lefebvre, Giuseppe Moschetti, Mikael Malmkvist et al
Semiconductor Science and Technology. Vol. 29 (3)
Journal article
2013

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind et al
Solid-State Electronics. Vol. 87, p. 85-89
Journal article
2009

Gate-recess Technology for InAs/AlSb HEMTs

Eric Lefebvre, Mikael Malmkvist, Malin Borg et al
IEEE Transactions on Electron Devices. Vol. 56 (9), p. 1904-1911
Journal article
2009

InAs/AlSb HEMTs characterised at cryogenic temperatures

Per-Åke Nilsson, Giuseppe Moschetti, Niklas Wadefalk et al
WOCSDICE 2009
Paper in proceedings
2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Giuseppe Moschetti, Per-Åke Nilsson, Niklas Wadefalk et al
2009 IEEE International Conference on Indium Phosphide & Related Materials, p. 323-5
Paper in proceedings
2009

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Gilles Dambrine, Sylvain Bollaert, Y. Roellens et al
2009 67th Annual Device Research Conference (DRC), p. 149-51
Paper in proceedings
2008

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

Mikael Malmkvist, Eric Lefebvre, Malin Borg et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (12), p. 2685-2691
Journal article
2008

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

Malin Borg, Eric Lefebvre, Mikael Malmkvist et al
Solid-State Electronics. Vol. 52 (5), p. 775-781
Journal article
2007

(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs

Eric Lefebvre, Malin Borg, Mikael Malmkvist et al
Proc. 19th Indium Phosphide and Related Materials, p. pp. 125-128
Paper in proceedings
2007

DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs

Malin Borg, Eric Lefebvre, Mikael Malmkvist et al
Proc. 19th Indium Phosphide and Related Materials, p. pp. 67-70
Paper in proceedings
2007

Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs

Mikael Malmkvist, Eric Lefebvre, Malin Borg et al
Proc. European Microwave Integrated Circuit Conference (EuMIC), p. pp. 24-27
Paper in proceedings
2007

Benchmarking of low band gap III-V based HEMTs and sub-100nm CMOS under low drain voltage regime

Sylvain Bollaert, Ludovic Desplanque, Xavier Wallart et al
Proc. European Microwave Integrated Circuit Conference (EuMIC), p. pp. 20-23
Paper in proceedings
2007

Development of InAs/AlSb HEMT technology for high-frequency operation

Jan Grahn, Eric Lefebvre, Malin Borg et al
Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. pp. 137-140
Paper in proceedings

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