Johan Adell

Electron Spectroscopic Studies of Homogenous (GaMn)As layers

Post-growth annealing of (Ga,Mn)As under Sb capping

Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

2011

Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As

Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B

Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces

2010

Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model

Reply to Comment on "As 3d core level studies of (GaMn)As annealed under As capping" by I. Ulfat, J. Adell, J. Sadowski, L. Ilver, J. Kanski, Surface Science 604 (2010), 125 by P. Jiricek, M. Cukr, I. Bartos

As3d core level studies of (GaMn)As annealed under As capping

Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure

Synchrotron light based spectroscopy of MBE-grown (GaMn)As structures

2009

Formation of epitaxial MnBi layers on (GaMn)As

Bismuth-stabilized (2×1) and (2×4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunnelingmicroscopy study

Anomalous Bismuth-Stabilized (2×1) Reconstructions on GaAs(100) and InP(100) Surfaces

A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy

Mn enriched surface of (GaMn)As layers annealed under arsenic capping

Photoemission study of the valence band offset between LT-GaAs and (GaMn)As