Ying Fu

Publikationer (29)
Projekt (0)

Visar 29 publikationer

2010

Effects of quantum dot labeling on endothelial progenitor cell function and viability

Mátyás Molnár, Peter Friberg, Ying Fu et al

Cell Medicine, Part B of Cell Transplantation. Vol. 1, p. 105-112

Artikel i vetenskaplig tidskrift

2007

Structural analysis of dilute nitride zincblend InGaNAs cluster by a semi-empirical quantum chemistry study

T.T. Han, Ying Fu, Shu Min Wang et al

Journal of Applied Physics. Vol. 101, p. 123707-

Artikel i vetenskaplig tidskrift

2006

Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers

Ying Fu, Yongqiang Wei, X. D. Wang et al

Journal of Applied Physics. Vol. 100 (7)

Artikel i vetenskaplig tidskrift

2006

Electron wave packet transmission through a Si quantum wire under the influence of an ionized impurity scattering potential

Ying Fu, Olof Engström

Journal of Nanoelectronics and Optoelectronics. Vol. 1, p. 108-

Artikel i vetenskaplig tidskrift

2006

Conductive adhesives

Ying Fu

Lead free electronics, IEEE Press, Wiley Interscience, A John Wiley & Sons Inc. Publication, USA

Kapitel i bok

2005

Entropy associated with electron emission from InAs/GaAs quantum dots

Olof Engström, Ying Fu, Ali Eghtedari

Physica E. Vol. 27, p. 380-

Artikel i vetenskaplig tidskrift

2005

Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP

H. Pettersson, L. Landin, Ying Fu et al

Microelectronics. Vol. 36 (3-6), p. 227-230

Artikel i vetenskaplig tidskrift

2005

Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al

CLEO-/EUROPE-EQEC 2005, Muchen, Germany

Paper i proceeding

2005

Detection wavelengths and photocurrents of very long wavelength quantum-well infrared photodetectors

N. Li, F. Guo, H. Zhen et al

Infrared Physics and Technology. Vol. 47 (1-2), p. 29-36

Artikel i vetenskaplig tidskrift

2005

6. Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al

APPLIED PHYSICS LETTERS. Vol. 87 (8), p. 081102-

Artikel i övrig tidskrift

2004

Photoluminescence spectra of doped GaAs films

Ying Fu, Magnus Willander, G.B Chen et al

Applied Physics A: Materials Science and Processing. Vol. 79 (3), p. 619-623

Artikel i vetenskaplig tidskrift

2004

Conductive adhesives

Ying Fu, Johan Liu, Magnus Willander

Lead free electronics, p. pp 285-351

Kapitel i bok

2004

Electron conduction through nano particles in electrically conductive adhesives

Ying Fu, Johan Liu

Micromaterials and Nanomaterials. Vol. 3, p. 104-

Artikel i övrig tidskrift

2004

Electron capture cross sections of InAs/GaAs quantum dots

Olof Engström, M. Kaniewska, Ying Fu et al

Applied Physics Letters. Vol. 85 (14), p. 2908-2910

Artikel i vetenskaplig tidskrift

2004

Wave packet transmission in a ZnO nanorod under the influence of repulsive/attractive scattering center

Ying Fu, Qiu-Hong Hu, Magnus Willander

Journal of Nanoscience and Nanotechnology. Vol. 4 (1-2), p. 91-3

Artikel i vetenskaplig tidskrift

2004

Quantum well infrared detectors

Ying Fu, W Lu

Encyclopedia of Nanoscience and Nanotechnology, ed. by H.S. Nalwa. Vol. 9, p. 179-97

Kapitel i bok

2004

Emission rates for electron tunneling from InAs quantum dots to GaAs substrate

Ying Fu, Olof Engström, Y Luo

Journal of Applied Physics. Vol. 96 (11), p. 6477-6481

Artikel i vetenskaplig tidskrift

2004

Semiconductor nanotransistors

Ying Fu

Encyclopedia of Nanoscience, ed. by H.S. Nalwa. Vol. 9, p. 697-718

Kapitel i bok

2004

Peak response wavelenghts of p-and n-type InGaAs-InP quantum well infrared photodetectors

Ying Fu, Magnus Willander, D.K. Sengupta

Applied Physics A. Vol. 80, p. 523-8

Artikel i vetenskaplig tidskrift

2004

Electron conduction through nano particles in electrically conductive adhesives

Ying Fu, Johan Liu

Micromaterials and Nanomaterials. Vol. 3, p. 104-109

Artikel i vetenskaplig tidskrift

2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Mikael Malmkvist, Ying Fu, Halldor Olafsson et al

Applid Physics Letters. Vol. 85, p. 3578-

Artikel i vetenskaplig tidskrift

2003

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al

International Conference on Trends in Nanotechnology, Salamanca, Spain

Paper i proceeding

2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al

Applied Physics Letters. Vol. 83, p. 3578-

Artikel i vetenskaplig tidskrift

2001

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

Mamor Mamor, Ying Fu, Omer Nur et al

Applied Physics A-Materials Science & Processing. Vol. 72 (5), p. 633-637

Artikel i vetenskaplig tidskrift

2000

Carrier conduction through the quantum barrier in a heterostructure barrier varactor Induced by an AC-Bias

Ying Fu, Magnus Willander, Jan Stake et al

Superlattices and Microstructures. Vol. 28 (2), p. 135-141

Artikel i vetenskaplig tidskrift

2000

n-Si/SiO2/Si heterostructure barrier varactor diode design

Ying Fu, Mamor Mamor, Magnus Willander et al

Applied Physics Letters. Vol. 77 (1), p. 103-105

Artikel i vetenskaplig tidskrift

1998

Capacitance Analysis for AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactor Diodes

Ying Fu, Lars Dillner, Jan Stake et al

Journal of Applied Physics. Vol. 83 (3), p. 1457-1462

Artikel i vetenskaplig tidskrift

1997

Modeling of the Heterostructure Barrier Varactor

Lars Dillner, Fariba Ferdos, Jan Stake et al

GigaHertz 97, p. 100-101

Paper i proceeding

1997

AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactors

Ying Fu, Jan Stake, Lars Dillner et al

Journal of Applied Physics. Vol. 82 (11), p. 5568-5572

Artikel i vetenskaplig tidskrift

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