Hans Hjelmgren

Associate Professor at Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Showing 32 publications

2019

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier

Anna Malmros, P. Gamarra, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 66 (1), p. 364-371
Journal article
2019

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Anna Malmros, J. T. Chen, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 66 (7), p. 2910-2915
Journal article
2017

Undervisa och examinera akademisk hederlighet

Hans Hjelmgren, Sheila Galt
Conference contribution
2016

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Olle Axelsson, Sebastian Gustafsson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 326-332
Journal article
2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros, P. Gamarra, M. A. di Forte-Poisson et al
IEEE Electron Device Letters. Vol. 36 (3), p. 235-237
Journal article
2012

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Hans Hjelmgren, Mattias Thorsell, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 59 (12), p. 3344-3349
Journal article
2011

Electrothermal Access Resistance Model for GaN-Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 58 (2), p. 466 - 472
Journal article
2010

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Hans Hjelmgren, Fredrik Allerstam, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 57 (3), p. 729-732
Journal article
2010

Characterization of Electro-Thermal Effects in GaN Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Conference poster
2009

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Per-Åke Nilsson, Mattias Sudow, Fredrik Allerstam et al
Materials Science Forum. Vol. 600-603, p. 1103-1106
Journal article
2008

UTC-PD Integration for Submillimetre-wave Generation

Biddut Kumar Banik, Josip Vukusic, Hans Hjelmgren et al
19th International Symposium on Space Terahertz Technology, ISSTT 2008; Groningen; Netherlands; 28 April 2008 through 30 April 2008, p. P7-1, 135
Paper in proceedings
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper in proceedings
2008

High Power Photonic MW/THz Generation Using UTC-PD

Biddut Kumar Banik, Josip Vukusic, Hans Hjelmgren et al
GigaHertz SympoSium 2008, p. 45-
Paper in proceedings
2008

Optimization of the UTC-PD Epitaxy for Photomixing at 340 GHz

Biddut Kumar Banik, Josip Vukusic, Hans Hjelmgren et al
International Journal of Infrared and Millimeter Waves. Vol. 29 (10), p. 914-923
Journal article
2008

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Mattias Sudow et al
IEEE Transactions on Electron Devices. Vol. 55 (8), p. 1875-1879
Journal article
2007

Hydrodynamic Simulations of Unitraveling-Carrier Photodiodes

Syed Rahman, Hans Hjelmgren, Josip Vukusic et al
IEEE Journal of Quantum Electronics. Vol. 43 (11), p. 1088-1094
Journal article
2007

High Frequency 4H-SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Per-Åke Nilsson et al
Materials Science Forum. Vol. 556-557, p. 795-798
Paper in proceedings
2007

Design and Fabrication of 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Einar Sveinbjörnsson et al
IEEE Transactions on Electron Devices. Vol. 54 (12), p. 3138-3145
Journal article
2007

Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

Hans Hjelmgren, Kristoffer Andersson, Joakim Eriksson et al
Solid-State Electronics. Vol. 51 (8), p. 1144-1152
Journal article
2006

Physical Simulations of Pseudomorphic InP HEMTs

Martin Fagerlind, Hans Hjelmgren, Mikael Malmkvist et al
WOCSDICE 2006, Fiskebäckskil, Sweden, p. 101-103
Conference contribution
2006

An SiC MESFET-based MMIC process

Mattias Sudow, Kristoffer Andersson, Niklas Billström et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 54 (12, Part 1), p. 4072-4078
Journal article
2006

SiC MESFET with a Double Gate Recess

Per-Åke Nilsson, Niklas Rorsman, Mattias Sudow et al
Materials Science Forum. Vol. 527-529, p. 1227-1230
Paper in proceedings
2006

High power-density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 527-529, p. 1277-1280
Paper in proceedings
2006

High Power Density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
IEEE Electron Device Letters. Vol. 27 (6), p. 469-471
Journal article
2006

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Kristoffer Andersson, Mattias Sudow, Per-Åke Nilsson et al
IEEE Electron Device Letters. Vol. 27 (7), p. 573-575
Journal article
2005

Fabrication of high power-density SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Proceedings of the GHz 2005 conference, Uppsala, Sweden
Conference contribution
1993

Single barrier varactors for submillimeter wave power generation

Svein M. Nilsen, Hans Grönqvist, Hans Hjelmgren et al
IEEE Trans. Microwave Theory Tech. Vol. 41 (4), p. 572-580
Journal article
1992

Numerical modelling of hot electron transport in a graded heterojunction diode

Hans Hjelmgren, Christopher Snowden
Int. J. Numerical Modelling: Electronic Networks, Devices and Fields. Vol. 5, p. 3-9
Journal article
1991

Numerical simulations of the capacitance of forward-biased Schottky-diodes

Hans Hjelmgren, Erik Kollberg, Lennart Lundgren
Solid-State Electronics. Vol. 34 (6), p. 587-590
Journal article
1990

Numerical Modeling of Hot Electrons in n-GaAs Schottky Barrier Diodes

Hans Hjelmgren
IEEE Trans. Electron Devices. Vol. 37 (5), p. 1228-1234
Journal article

Save references

If you have installed Zotero or Mendeley on your computer you can use a plugin to extract references from the publications you see.

Download plugins:
Zotero
Mendeley

There are no projects.
There might be more projects where Hans Hjelmgren participates, but you have to be logged in as a Chalmers employee to see them.