Johan Bergsten

2023

Optimization of InGaAs Channel for Cryogenic InP HEMT Low-Noise Amplifiers

2022

Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

2022

On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs

2021

Reduction of Noise Temperature in Cryogenic InP HEMT Low Noise Amplifiers with Increased Spacer Thickness in InAlAs-InGaAs-InP Heterostructures

Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers

2018

A GaN-SiC hybrid material for high-frequency and power electronics

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Analysis of Thermal Effects in Integrated Radio Transmitters

A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

2015

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Advanced Heterostructure Designs and Recessed Ohmic Contacts for III-Nitride-Based HEMTs

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

2014

Spin transport and precession in graphene measured by nonlocal and three-terminal methods

2014

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

2014

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures