Qing Xiang Zhao
Visar 47 publikationer
Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs
1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy
Growth and Characterization of GaInNAs by Molecular Beam Epitaxy Using a Nitrogen Irradiation Method
ZnO nanowires: chemical growth, electrodeposition, and application to intracellular nano-sensors
1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)
Fundamentals and properties of zinc oxide nanostructures: optical and sensing applications
Light emission from different zinc oxide junctions and nanostructures
Light-emitting diodes based on n-ZnO nano-wires and p-type organic semiconductors
Hydrothermally grown singlecrystalline zinc oxide; characterization and modification
Growth of ZnO nanostructures by vapor-liquid-solid method
Excitonic effects in ZnO nanowires and hollow nanotubes
Optical properties of GaInNAs/GaAs quantum well structures
State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy
Identification of oxygen and zinc vacancy optical signals in ZnO
From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs
Carrier spin dynamics in modulation-doped InAs/GaAs quantum dots
Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy
Synthesis and characterization of ZnO nanostructures grown on Si substrates
A novel photoluminescence transition influenced by O implantation in ZnO bulk
Photoluminescence property of InAs quantum dots with InxGa1-x as layer inserted
Recent progress in growth and devices based on Zinc Oxide nanostructures
Some silicon-based heterostructures for optical applications
Spin relaxation in charged InAs/GaAs quantum dots
12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy
Boundary conditions for electron tunneling in complex two- and three-dimensional structures
Effects of nitrogen incorporation on the properties of GaInNAs quantum well structures
Solid and soft nanostructured materials: fundamentals and applications
Growth and characterization of ZnO nanostructures
Deep-level emissions influenced by O and Zn implantations in ZnO
High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm
Carrier dynamics in modulation-doped InAs GaAs quantum dots
Long wavelenght InGaAs/GaAs quantum well lasers grown by molecular beam epitaxy
Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping
1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells
1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping
Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence
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