Einar Sveinbjörnsson

2015

Hysteresis modeling in graphene field effect transistors

2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated using Sodium Enhanced Oxidation Technique

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

A comparative study of surface passivation on SiC BJTs with high current gain

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

High Frequency 4H-SiC MOSFETs

Design and Fabrication of 4H-SiC RF MOSFETs

1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

High power-density 4H-SiC RF MOSFETs

Fabrication and characterization of field-plated buried-gate SiC MESFETs

High Power Density 4H-SiC RF MOSFETs

High channel mobility 4H-SiC MOSFETs

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Fabrication of high power-density SiC MOSFETs

Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

A comparison between SiO2/4H-SiC interface traps on (0001) and (11-20) faces

High field effect electron mobility in Si face 4H-SiC MOSFET

Analysis of the electrono traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Electroluminescence from silicon p-n junctions prepared by wafer bonding

Electrical Properties of Gold-related Defect Complexes in Silicon