Mikael Malmkvist

Visar 31 publikationer

2014

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Eric Lefebvre, Giuseppe Moschetti, Mikael Malmkvist et al
Semiconductor Science and Technology. Vol. 29 (3)
Artikel i vetenskaplig tidskrift
2010

Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

H. Rodilla, T. Gonzalez, Mikael Malmkvist et al
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 333-336
Paper i proceeding
2009

Gate-recess Technology for InAs/AlSb HEMTs

Eric Lefebvre, Mikael Malmkvist, Malin Borg et al
IEEE Transactions on Electron Devices. Vol. 56 (9), p. 1904-1911
Artikel i vetenskaplig tidskrift
2009

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Gilles Dambrine, Sylvain Bollaert, Y. Roellens et al
2009 67th Annual Device Research Conference (DRC), p. 149-51
Paper i proceeding
2009

Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications

Mikael Malmkvist, Shu Min Wang, Jan Grahn
IEEE Transactions on Electron Devices. Vol. 56 (1), p. 126-131
Artikel i vetenskaplig tidskrift
2009

InAs/AlSb HEMTs characterised at cryogenic temperatures

Per-Åke Nilsson, Giuseppe Moschetti, Niklas Wadefalk et al
WOCSDICE 2009
Paper i proceeding
2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Giuseppe Moschetti, Per-Åke Nilsson, Niklas Wadefalk et al
2009 IEEE International Conference on Indium Phosphide & Related Materials, p. 323-5
Paper i proceeding
2008

Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications

Mikael Malmkvist, Shu Min Wang, Jan Grahn
IEEE Transactions on Electron Devices. Vol. 55 (1), p. pp. 268-275
Artikel i vetenskaplig tidskrift
2008

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

Malin Borg, Eric Lefebvre, Mikael Malmkvist et al
Solid-State Electronics. Vol. 52 (5), p. 775-781
Artikel i vetenskaplig tidskrift
2008

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

Mikael Malmkvist, Eric Lefebvre, Malin Borg et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (12), p. 2685-2691
Artikel i vetenskaplig tidskrift
2007

Development of InAs/AlSb HEMT technology for high-frequency operation

Jan Grahn, Eric Lefebvre, Malin Borg et al
Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. pp. 137-140
Paper i proceeding
2007

(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs

Eric Lefebvre, Malin Borg, Mikael Malmkvist et al
Proc. 19th Indium Phosphide and Related Materials, p. pp. 125-128
Paper i proceeding
2007

DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs

Malin Borg, Eric Lefebvre, Mikael Malmkvist et al
Proc. 19th Indium Phosphide and Related Materials, p. pp. 67-70
Paper i proceeding
2007

Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs

Mikael Malmkvist, Eric Lefebvre, Malin Borg et al
Proc. European Microwave Integrated Circuit Conference (EuMIC), p. pp. 24-27
Paper i proceeding
2007

Benchmarking of low band gap III-V based HEMTs and sub-100nm CMOS under low drain voltage regime

Sylvain Bollaert, Ludovic Desplanque, Xavier Wallart et al
Proc. European Microwave Integrated Circuit Conference (EuMIC), p. pp. 20-23
Paper i proceeding
2006

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology

Mikael Malmkvist, Anders Mellberg, Niklas Rorsman et al
Solid State Electronics. Vol. 50 (5), p. 858-864
Artikel i vetenskaplig tidskrift
2006

Physical Simulations of Pseudomorphic InP HEMTs

Martin Fagerlind, Hans Hjelmgren, Mikael Malmkvist et al
WOCSDICE 2006, Fiskebäckskil, Sweden, p. 101-103
Övrigt konferensbidrag
2006

RF and Noise Optimization of Pseudomorphic inP HEMT Technology

Mikael Malmkvist
Licentiatavhandling
2006

Noise optimization of InP HEMTs

Mikael Malmkvist, Anna Malmros, Niklas Wadefalk et al
Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. 97-99
Paper i proceeding
2006

Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs

Mikael Malmkvist, Malin Borg, Shu Min Wang et al
18th International Conference on Indium Phosphide and Related Materials, pp. 386-388, p. 329-331
Paper i proceeding
2005

A W-band MMIC amplifier using 70-nm gate length InP HEMT technology

Mikael Malmkvist, Anders Mellberg, Jan Grahn
35th European Microwave Conference
Paper i proceeding
2005

Optimization of sub-100 nm InP HEMT technology

Jan Grahn, Malin Fridman, Mikael Malmkvist et al
Proceed. 16th Symp. on Space-Terahertz Technology, p. 132-
Paper i proceeding
2005

W-band MMIC amplifier using pseudomorphic InP HEMT wiht sub 100-nm gate length

Mikael Malmkvist, Anders Mellberg, Jan Grahn
Gigahertz 2005
Övrigt konferensbidrag
2005

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

Jan Grahn, Piotr Starski, Mikael Malmkvist et al
Proceed. of Conf on InP and Related Materials (IPRM'05), p. 124-128
Paper i proceeding
2004

Electron capture cross sections of InAs/GaAs quantum dots

Olof Engström, M. Kaniewska, Ying Fu et al
Applied Physics Letters. Vol. 85 (14), p. 2908-2910
Artikel i vetenskaplig tidskrift
2004

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

Mikael Malmkvist, Anders Mellberg, Jan Grahn et al
16th International Conference on Indium Phosphide and Related Materials, p. 386-388
Paper i proceeding
2004

Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel

Anders Mellberg, Mikael Malmkvist, Jan Grahn et al
Proc. 34th European Microwave Conf., p. 171-174
Paper i proceeding
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Mikael Malmkvist, Ying Fu, Halldor Olafsson et al
Applid Physics Letters. Vol. 85, p. 3578-
Artikel i vetenskaplig tidskrift
2003

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
International Conference on Trends in Nanotechnology, Salamanca, Spain
Paper i proceeding
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
Applied Physics Letters. Vol. 83, p. 3578-
Artikel i vetenskaplig tidskrift

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