Hendrikus Jos

RF Monte Carlo calculation of power amplifier efficiency as function of signal bandwidth

Efficient and Wideband Power Amplifiers for Wireless Infrastructure Applications

Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory

2013

A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages

2012

Linearization Study of a Highly Efficient CMOS-GaN RF Pulse Width Modulation Based Transmitter

2012

Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors

Varactor-Based Dynamic Load Modulation of RF PAs

2011

High-Efficiency RF Pulsewidth Modulation of Class-E Power Amplifiers

High Efficiency Transmitter Using Varactor Based Dynamic Load Modulation

Highly Efficient Dynamic Load Modulation Transmitter

Design of Varactor-Based Tunable Matching Networks for Dynamic Load Modulation of High Power Amplifiers

Evaluation of high efficiency PAs for use in supply- and load-modulation transmitters

Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures

Practical realizations of high efficiency switched mode power amplifiers

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

High Frequency 4H-SiC MOSFETs

Design and Fabrication of 4H-SiC RF MOSFETs

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

High power-density 4H-SiC RF MOSFETs

High Power Density 4H-SiC RF MOSFETs

High channel mobility 4H-SiC MOSFETs

A Load Modulated High Efficiency Power Amplifier

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Fabrication of high power-density SiC MOSFETs

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

High field effect electron mobility in Si face 4H-SiC MOSFET