Per-Åke Nilsson
Showing 87 publications
Magnetic Influence on CryogenicInP HEMT LNAs
Magnetic Influence on Cryogenic InP HEMT DC Characteristics
Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K
Cryogenic LNAs for SKA band 2 to 5
Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Cryogenic low-noise InP HEMTs: A source-drain distance study
10 K Room Temperature LNA for SKA Band 1
Ultra Low Noise 600/1200 GHz and 874 GHz GaAs Schottky Receivers for SWI and ISMAR
Zero-Bias Self-Switching In65Ga35As channel Diodes for Terahertz Detection,
Suppression of Parasitic Substrate Modes in Multilayer Integrated Circuits
Phonon black-body radiation limit for heat dissipation in electronics
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
SWI 1200/600 GHz highly integrated receiver front-ends
Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study
Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Graphene self-switching diodes as zero-bias microwave detectors
Reliability Assessment of Mixers, Multipliers and Low Noise Amplifiers for Space Applications
On the effect of delta-doping in self-switching diodes
Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments
Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate
An InP MMIC process optimized for low noise at Cryo
Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
A G-Band (140-220 GHz) planar stubbed branch-line balun in BCB technology
Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications
200 GHz communication system using unipolar InAs THz rectifiers
Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT
Influence of gate-channel distance in low-noise InP HEMTs
Terahertz detection in zero-bias InAs self-switching diodes at room temperature
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Fabrication and DC characterization of InAs/AlSb self-switching diodes
Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Optimized InP HEMTs for low noise at cryogenic temperatures
Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Source-drain scaling of ion-implanted InAs/AlSb HEMTs
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Anisotropic transport properties in InAs/AlSb heterostructures
HIGH ROBUSTNESS GAN HEMT SUBJECT TO REVERSE BIAS STRESS
DC and RF cryogenic behaviour of InAs/AlSb HEMTs
Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs
Narrow band gap III-V based-FET for ultra low power high frequency analog applications
InAs/AlSb HEMTs characterised at cryogenic temperatures
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Thermal Study of the High-Frequency Noise in GaN HEMTs
Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs
An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs
SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer
GaN Device and MMIC development at Chalmers
Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate
Design and Fabrication of 4H-SiC RF MOSFETs
SiC MESFET with a Double Gate Recess
High power-density 4H-SiC RF MOSFETs
A highly linear double balanced Schottky diode S-band mixer
An SiC MESFET-based MMIC process
Fabrication and characterization of field-plated buried-gate SiC MESFETs
High Power Density 4H-SiC RF MOSFETs
High channel mobility 4H-SiC MOSFETs
High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material
Fabrication of high power-density SiC MOSFETs
The Chalmers microstrip SiC MMIC Process
DC and RF performance of MESFET mode 4H-SiC Static Induction transistor
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
Planar Schottky Microwave Diodes on 4H-SiC
High field effect electron mobility in Si face 4H-SiC MOSFET
Planar SiC Schottky Diodes for MMIC Applications
Thin films of YBa2Cu3O7 deposited by co-evaporation, Josephson junctions, and DC-SQUIDS
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