Per-Åke Nilsson
Visar 87 publikationer
Magnetic Influence on CryogenicInP HEMT LNAs
Magnetic Influence on Cryogenic InP HEMT DC Characteristics
Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K
Cryogenic LNAs for SKA band 2 to 5
Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Cryogenic low-noise InP HEMTs: A source-drain distance study
10 K Room Temperature LNA for SKA Band 1
Ultra Low Noise 600/1200 GHz and 874 GHz GaAs Schottky Receivers for SWI and ISMAR
Zero-Bias Self-Switching In65Ga35As channel Diodes for Terahertz Detection,
Suppression of Parasitic Substrate Modes in Multilayer Integrated Circuits
Phonon black-body radiation limit for heat dissipation in electronics
SWI 1200/600 GHz highly integrated receiver front-ends
Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study
Graphene self-switching diodes as zero-bias microwave detectors
Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Reliability Assessment of Mixers, Multipliers and Low Noise Amplifiers for Space Applications
On the effect of delta-doping in self-switching diodes
Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments
An InP MMIC process optimized for low noise at Cryo
Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate
A G-Band (140-220 GHz) planar stubbed branch-line balun in BCB technology
Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications
Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Influence of gate-channel distance in low-noise InP HEMTs
200 GHz communication system using unipolar InAs THz rectifiers
Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT
Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
Terahertz detection in zero-bias InAs self-switching diodes at room temperature
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Optimized InP HEMTs for low noise at cryogenic temperatures
Source-drain scaling of ion-implanted InAs/AlSb HEMTs
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Fabrication and DC characterization of InAs/AlSb self-switching diodes
Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
Anisotropic transport properties in InAs/AlSb heterostructures
HIGH ROBUSTNESS GAN HEMT SUBJECT TO REVERSE BIAS STRESS
DC and RF cryogenic behaviour of InAs/AlSb HEMTs
InAs/AlSb HEMTs characterised at cryogenic temperatures
Narrow band gap III-V based-FET for ultra low power high frequency analog applications
Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Thermal Study of the High-Frequency Noise in GaN HEMTs
An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs
Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs
SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
GaN Device and MMIC development at Chalmers
A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer
Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate
Design and Fabrication of 4H-SiC RF MOSFETs
SiC MESFET with a Double Gate Recess
A highly linear double balanced Schottky diode S-band mixer
An SiC MESFET-based MMIC process
High power-density 4H-SiC RF MOSFETs
Fabrication and characterization of field-plated buried-gate SiC MESFETs
High Power Density 4H-SiC RF MOSFETs
High channel mobility 4H-SiC MOSFETs
High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material
Fabrication of high power-density SiC MOSFETs
The Chalmers microstrip SiC MMIC Process
DC and RF performance of MESFET mode 4H-SiC Static Induction transistor
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
Planar Schottky Microwave Diodes on 4H-SiC
High field effect electron mobility in Si face 4H-SiC MOSFET
Planar SiC Schottky Diodes for MMIC Applications
Thin films of YBa2Cu3O7 deposited by co-evaporation, Josephson junctions, and DC-SQUIDS
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