Shumin Wang
Heading the Epitaxy (MBE) division of the Optoelectronics group.
Showing 356 publications
Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb
Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers
Sensitive parameters affecting dark current characteristics of SCD
InAs/GaAs quantum dot laser epitaxially grown on on-axis (001) GaAsOI substrate
InAs triangular quantum wells grown on InP/SiO
Frequency tuning behaviour of terahertz quantum cascade lasers revealed by a laser beating scheme
Integrated free-space optomechanics with AlGaAs heterostructures
Effects of substrate temperature on the uniformity of InGaAs epilayers using a dual-zone manipulator
Si-based InGaAs photodetectors on heterogeneous integrated substrate
Probing the local electronic structure of isovalent Bi atoms in InP
Stress and strain analysis of Si-based III - V template fabricated by ion-slicing
Structural property study for GeSn thin films
Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
Electronic properties and band offsets in InP(1-x-y) BixNy
Bismuth-Related Nanostructures
Dilute bismide and nitride alloys for mid-IR optoelectronic devices
MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm
Growth and properties of AlSbBi thin films by molecular beam epitaxy
Quantum Spin Hall States in 2D Bismuth-Based Materials
Phosphorus and Nitrogen Containing Dilute Bismides
Dark Current Characteristic of p-i-n and nBn MWIR InAs/GaSb Superlattice Infrared Detectors
Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi
Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning
Molecular beam epitaxy growth of AlAs 1-x Bi x
Behavior of Raman modes in InPBi alloys under hydrostatic pressure
Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
Molecular beam epitaxy growth of GaSb1-xBix without rotation
Abnormal strain in suspended GeSn microstructures
Inpbi quantum dots for super-luminescence diodes
Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy
Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]
Effects of growth conditions on optical quality and surface morphology of InGaAsBi
Tuning the Optoelectronic Properties of Capped Tensile-strained Ge Quantum Dots by Lattice Mismatch
Wavelength extension in GaSbBi quantum wells using delta-doping
A comparative study of selective dry and wet etching of germanium-tin (Ge1-xSnx) on germanium
Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films
Progress on III-V-Bi Alloys and Light Emitting Devices
Influence of Bi on morphology and optical properties of InAs QDs: Publisher's note
Bismuth incorporation in different configurations of InP1-xBix alloys
Negative thermal quenching of below-bandgap photoluminescence in InPBi
Bi2Te3 photoconductive detectors on Si
Structural and elastic properties of zinc-blende and wurtzite InN1-xBix alloys
Electrically injected GaAsBi/GaAs single quantum well laser diodes
Electronic and excitonic properties of two-dimensional and bulk InN crystals
1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
1140 nm electrically injected GaAsBi/GaAs single quantum well laser diodes
Photoluminescence of GaSbBi/GaSb Quantum Wells Grown by Molecular Beam Epitaxy
High-Transparency Al/Bi2Te3 Double-Barrier Heterostructures
Suspended GeSn microstructure for light source on Si
Structural, electronic, vibrational and optical properties of Bi-n clusters
Delta-doping of GaSbBi Quantum Wells Grown by Molecular Beam Epitaxy
Closing the bandgap for III-V nitrides toward mid-infrared and THz applications
Nanoscale distribution of Bi atoms in InP1−xBix
Structural properties of GeSn thin films grown by molecular beam epitaxy
Structural and optical properties of GaSbBi/GaSb quantum wells
Iso-electronic centers in III-V semiconductors studied by Scanning Tunneling Microscopy
Phase transitions and elastic properties of InN1-xBix under high pressure
Novel group IV nano- and micro-structures for light sources on silicon
Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy
Electrically pumped 1.136 um GaAsBi/AlGaAs quantum well lasers grown by molecular beam epitaxy
Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires
Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission
Electrically pumped GaAsBi laser diodes
Quasiparticle and optical properties of strained stanene and stanane
GeSn/Ge dual-nanowire heterostructure
Light emitting devices of dilute bismides
Tunable band gaps in stanene/MoS2 heterostructures
Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator
Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
Molecular Beam Epitaxy of GeSn Thin Films on Ge
Influence of Bi on morphology and optical properties of InAs QDs
Structural and electronic properties of two-dimensional stanene and graphene heterostructure
The influence of non-uniform nano distribution of Bi atoms on the optical property of InPBi
InGaAsBi materials grown by gas source molecular beam epitaxy
Tuning the electronic and thermodynamic properties of Bi-doped InN alloys
Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy
MBE of tensile-strained Ge quantum dots for light sources on Si
Nanoscale Distribution of Bismuth in InPBi
Highly tensile-strained Ge quantum dots on GaSb by MBE for light sources on Si
Characteristics of anomalous photoluminescence in InP1-xBix
Dilute III-PBi and III-SbBi for IR applications
Effects of Bi Flux on the Properties of GaSbBi Films Grown by Molecular Beam Epitaxy
Photoluminescence from tensile-strained Ge quantum dots
Structural and optical properties of InGaAs/GaAsBi type II quantum well
Tension-induced mechanical properties of stanene
Influence of bismuth on morphology and optical property of InAs quantum dots
Epitaxial Growth and Physical Properties of Indium Phosphide Bismide
Negative thermal photoluminescence quenching of defect-related transitions in InP1-xBix
Influence of GaAsBi capping layer on morphology of InAs quantum dots
Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
Structural Properties and Phase Transition of Na Adsorption on Monolayer MoS2
Structural and electronic properties of two-dimensional hybrid stanene and graphene heterostructure
Anomalous photoluminescence in InP1-xBix
The effect of Bi-In hetero-antisite defects in In1-xPBix alloy
Structural and Optical Properties of High Bi Content GaSbBi Films Grown by Molecular Beam Epitaxy
Growth and material properties of InPBi thin films using gas source molecular beam epitaxy
THz Emission Studies on Semiconductor Alloy, InAsBi
III-V light emitters on Ge and Si substrates
Bi2Te3 Topological Insulator photodetector
Optical Properties of InGaAs/GaAsBi Type-II Quantum Wells
Room temperature InAs quantum dot lasers on germanium substrates
Valence band anticrossing in InP1-xBix
Cross-Sectional Scanning Tunneling Microscopy of Bi Atoms in InP
Thermoelectric properties of SnSe compound
A new route toward light emission from Ge: tensile-strained quantum dots
Nanoscale Distribution of Bismuth in InPBi
Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy
Wavelength tuning of InAs quantum dot laser by micromirror device
Valence Band Anticrossing in InP1-xBix
Raman spectroscopy of epitaxial topological insulator Bi2Te3 thin films on GaN substrates
Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy
Recent progress on dilute bismides
High quality InAs quantum dot lasers on germanium substrates
Novel Dilute Bismides for IR optoelectronics
Natural patterning of templates on GaAs by formation of cracks
Molecular Beam Epitaxy Growth and Characterization of InGaPBi Films
Growth and Characterization of InGaPBi Thin Films by Molecular Beam Epitaxy
Raman Spectroscopy of Bi4Te3 Thin Films Grown by MBE
Novel InGaPBi single crystal grown by molecular beam epitaxy
Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates
Phase transition of bismuth telluride thin films grown by MBE
Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound
Raman Scattering of InP1-xBix Grown by Molecular Beam Epitaxy
Bi2Te3 Thin Films Grown on Vicinal GaAs(111)B Substrates by MBE
Natural Patterning of Templates on GaAs by Formation of Cracks
Thermoelectric properties of quaternary BiSbTeSe compound
Structural and electronic properties of InPBi alloys
Electronic and optical properties of InGaAs/GaAs quantum dots with tunable aspect-ratio
Defect studies in MBE grown GaSb1-x Bi x layers
Point defect balance in epitaxial GaSb
Vanadium doping on magnetic properties of H-passivated ZnO nanowires
Evolution of Bi2Te3 on GaN Grown by MBE
Growth of dilute bismides by molecular beam epitaxy (Invited talk)
Strain induced composition profile in InGaN/GaN core-shell nanowires
Bi2Te3 Thin Films Grown by Molecular Beam Epitaxy (Invited talk)
Raman Spectroscopy of Epitaxial Topological Insulator Bi2Te3 on GaN
Electronic and magnetic properties of vanadium doped AlN nanosheet under in-plane biaxial strains
Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
Strain Analysis of Tensile-Strained Ge Quantum Dots Grown by MBE
Semiconductor Compatible Synthesis of Nano-scale Graphene at Low Temperature
InPBi for IR optoelectronic applications
Thermal Annealing on InP1-xBix Grown by Molecular Beam Epitaxy
Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
First-principles study on electronic and magnetic properties of (Mn,Fe)-codoped ZnO
Novel Dilute InPBi for IR Emitters
InPBi Single Crystals Grown by Molecular Beam Epitaxy
Template-less Synthesis of Hollow Carbon Nanospheres for White Light-Emitting Diodes
InAs quantum dot lasers grown by gas source molecular beam epitaxy on Ge substrate
High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE
Dilute bismides for near and mid-infrared applications
Defect studies in MBE grown GaSbBi layers
MBE synthesis of graphene using CBr4
Tensile strained Ge thin films grown on InGaP/GaAs metamorphic templates
Investigation on structural, electronic and magnetic propeties of Mn doped Ga12N12 clusters
Structural properties and energetics of GaAs nanowires
Bismuth alloying properties in GaAs nanowires
Dilute Bismides for MIR applications
MBE of dilute-nitride optoelectronic devices
A novel semiconductor compatible path for graphene syntheis
Dilute Bismide and its Optoelectronics Applications
Record high mobility Bi2Te3 thin film grown by MBE
Molecular beam epitaxy growth of InSb1-xBix thin films
A theoretical investigation on thermoelectric performance of ternary (Bi1-xSbx)(2)Te-3 compound
New semiconductor alloy UbPBi grown by molecular beam epitaxy
Dilute Bismides for Mid-IR Applications
Phase transition of MBE grown Bithmuth Telluride from Bi2T3 to Bi4Te3
MBE growth of Bi2Te3 for Thermoelectrics
Defect studies in MBE grown GaSbBi layers
Growth of metamorphic InGaP layers on GaAs substrates
Novel Dilute Bismides for IR Optoelectronics Applications
Magnetic properties in (Mn,Fe)-codoped ZnO nanowire
Optical properties of InGaAsBi/GaAs quantum wells and InAsBi layer on GaAs substrate
Electronic structure and thermoelectric properties of Bi-2(Te1-xSex)(3) compound
Chemical vapor deposition of graphene on liquid metal catalysts
Light Emission from InGaAs/GaAs Quantum Wells at 1.3 µm Using Bi as Surfactant
Growth of GaSb1-xBix by molecular beam epitaxy
Metamorphic Quantum Well Lasers
Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
Polarization-Resolved Magneto-Photoluminescence of InGaAs(N)/GaAs Quantum Wells
Growth of metamorphic InGaP layers on GaAs substrates
High quality strain-compensated multiple InAs/GaNAs quantum dot layers grown by MBE
Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures
Molecular Beam Epitaxy Growth of GaSbxBi1-x
Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
Growth Optimization for InAs/GaSb T2SL Structures by MBE
Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
Molecular Beam Epitaxy Growth of InSbxBi1-x
Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology
Temperature stability of intersubband transitions in AlN/GaN quantum wells
Comparative Study of Spacer Layers for InAs Quantum Dot Stacks
Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers
Dislocation-induced composition profile in alloy semiconductors
Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE
Anisotropic transport properties in InAs/AlSb heterostructures
1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs
Critical Thickness and Radius for Axial Heterostructure Nanowires Using Finite Element Method
Metamorphic InGaAs Materials and Telecom Lasers
Material Studies for Quantum Dot Intermediate Band Solar Cells
Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers
Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 µm on GaAs Grown by Molecular Beam Epitaxy
Modeling of Heterostructure Nanowires and Dots
Metamorphic InGaAs telecom lasers on GaAs
A 1.31 μm GaInNAs Triple Quantum Well Laser with 13 GHz Small Signal Modulation Bandwidth
Independent determination of In and N concentrations in GaInNAs alloys
10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm
Initial Capping and Stacking of Quantum Dots
Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs
13 GHz Bandwidth of 1.31 μm GaInNAs Triple Quantum Well Lasers
1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy
Growth and Characterization of GaInNAs by Molecular Beam Epitaxy Using a Nitrogen Irradiation Method
Reliability assessment and degradation analysis of 1.3 µm GaInNAs lasers
Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE
Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)
1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)
Very Low Threshold Current Density 1.29 µm GaInNAs Triple Quantum Well Lasers Grown by MBE
Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications
High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs
Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser
Low Threshold Current Density 1.3 µm Metamorphic InGaAs/GaAs Quantum Well Laser Diodes
Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser
Un-Cooled 10 Gb/s dilute-nitride optical transmitters for the 1300 nm wavelength range
Evolution of Valence-Band Alignment with Nitrogen Content in GaNAs/GaAs Single Quantum Wells
Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers
Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers
MBE Growth of a 1.58 µm InGaAs Quantum Well Lasers on GaAs
Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs
Experimental Analysis of GaAs Based 1.3-1.6m Laser Materials
Experimental analysis of increase open circuit voltage of a quantum dot intermediate band solar cell
Thermal performance investigation of DQW GaInNAs laser diodes
Simulation of DQW GaInNAs laser diodes
1.58 µm InGaAs quantum well laser on GaAs
Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy
Metamorphic InGaAs quanum wells for light emission at 1.3 – 1.6 µm
Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers
Manipulation of strain relaxation in metamorphic heterostructures
On the Temperature Dependence of the Threshold Current for GaInNAs/GaAs Quantum-Well Lasers
Critical thickness of nano-scale lattice mismatched heterostructures
GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy
Electrical, optical and thermal simulation of DQW GaInNAs laser diodes
State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy
Optical properties of GaInNAs/GaAs quantum well structures
High performance 1.3 mm GaInNAs Quantum Well Laser on GaAs
10 Gb/s modulation of 1.3 µm GaInNAs lasers up to 110 degr.C
Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy
From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs
The FAST ACCESS project: Low cost 1.3 µm sources for FAST ACCESS technologies
Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs
Effects of nitrogen incorporation on the properties of GaInNAs quantum well structures
2. High performance 1.28 mm GaInNAs Double Quantum Well lasers
12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy
Scaling of epitaxial layers in a 70 nm gate length InGaAs-InAlAs-InP HEMT technology
Strong 1.3-1.6 µm Light Emission from Metamorphic InGaAs Quantum Wells on GaAs
Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology
High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers
Optical properties of GaInNAs/GaAs quantum well structures
High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm
InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance
Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber
Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping
High-quality 1.3 um GalnNAs single quantum well lasers grown by MBE
Long wavelenght InGaAs/GaAs quantum well lasers grown by molecular beam epitaxy
1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping
1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells
Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence
The band offset and the critical layer thickness in III-V compound semiconductor heterostructures
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